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1. product profile 1.1 general description high voltage, high speed, planar passivated npn power switching transistor in a sot54 (to-92) 3 leads plastic package. 1.2 features and benefits ? fast switching ? high voltage capability of 700 v 1.3 applications ? compact fluorescent lamps (cfl) ? electronic lighting ballasts ? inverters ? off-line self-oscillati ng power supplies 1.4 quick reference data BUJ100LR npn power transistor rev. 02 ? 29 july 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit i c collector current dc; see figure 2 --1a p tot total power dissipation t lead 25 c; see figure 1 --2.1w v cesm collector-emitter peak voltage v be =0v --700v static characteristics h fe dc current gain v ce =5v; i c =0.8a; t lead =25c; see figure 8 ; see figure 9 57.520
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 2 of 12 nxp semiconductors BUJ100LR npn power transistor 2. pinning information 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1 b base sot54 (to-92) 2 c collector 3eemitter 1 2 3 sym123 c e b table 3. ordering information type number package name description version BUJ100LR to-92 plastic single-ended leaded (through hole) package; 3 leads sot54 table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v cesm collector-emitter peak voltage v be = 0 v - 700 v v cbo collector-base voltage i e = 0 a - 700 v v ceo collector-emitter voltage i b = 0 a - 400 v i c collector current dc; see figure 2 -1a i cm peak collector current - 2 a i b base current dc - 0.5 a i bm peak base current - 1 a p tot total power dissipation t lead 25 c; see figure 1 -2.1w t stg storage temperature -65 150 c t j junction temperature - 150 c v ebo emitter-base voltage i c = 0 a; i(emitter) = 10 ma - 9 v
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 3 of 12 nxp semiconductors BUJ100LR npn power transistor fig 1. normalized total power dissipation as a function of lead temperature fig 2. forward bias safe operating area t lead ( c) 0 200 150 50 100 003aae644 40 80 120 p der (%) 0 003aad545 10 ? 1 10 ? 2 10 1 10 2 i c (a) 10 ? 3 v cl(ce) (v) 1 10 3 10 2 10 dc (1) i c(max)
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 4 of 12 nxp semiconductors BUJ100LR npn power transistor 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-lead) thermal resistance from junction to lead see figure 3 --60k/w r th(j-a) thermal resistance from junction to ambient printed-circuit board mounted; lead length 4 mm - 150 - k/w fig 3. transient thermal impedance from juncti on to lead as a function of pulse width 001aab451 1 10 2 10 ? 1 10 z th(j-lead) (k/w) 10 ? 2 t p (s) 10 ? 5 110 10 ? 1 10 ? 2 10 ? 4 10 ? 3 t p t p t p t t =
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 5 of 12 nxp semiconductors BUJ100LR npn power transistor 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics i ces collector-emitter cut-off current v be =0v; v ce =700v; t j =125c --5ma i ebo emitter-base cut-off current v eb =9v; i c =0a; t lead =25c --1ma v ceosus collector-emitter sustaining voltage i b =0a; i c =1ma; l c =25mh; t lead =25c; see figure 4 ; see figure 5 400 - - v v cesat collector-emitter saturation voltage i c = 0.25 a; i b =50ma; t lead =25c; see figure 6 -0.20.5v i c =0.5a; i b =125ma; t lead =25c; see figure 6 -0.31v i c = 0.75 a; i b =250ma; t lead =25c; see figure 6 -0.41.5v v besat base-emitter saturation voltage i c = 0.25 a; i b =50ma; t lead =25c; see figure 7 --1v i c =0.5a; i b =125ma; t lead =25c; see figure 7 --1.2v h fe dc current gain i c =0.5ma; v ce =2v; t lead =25c 12 - - i c =0.4a; v ce =5v; t lead =25c; see figure 8 ; see figure 9 10 - 30 i c =0.8a; v ce =5v; t lead =25c; see figure 8 ; see figure 9 57.520 dynamic characteristics t f fall time i c =1a; i bon =200ma; v bb =-5v; l b =1h; t lead = 25 c; inductive load; see figure 10 ; see figure 11 -80-ns fig 4. test circuit for collector-emitter sustaining voltage fig 5. oscilloscope display for collector-emitter sustaining voltage test waveform 001aab9 87 horizontal 1 300 6 v vertical oscilloscope 50 v 100 to 200 30 hz to 60 hz 001aab988 v ce (v) min v ceosus i c (ma) 10 100 250 0
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 6 of 12 nxp semiconductors BUJ100LR npn power transistor fig 6. collector-emitter saturation voltage as a function of collector current; typical values fig 7. base-emitter saturation voltage as a function of collector current; typical values fig 8. dc current gain as a function of collector current; typical values fig 9. dc current gain as a function of collector current; typical values i c (a) 10 ? 2 10 1 10 ? 1 003aad548 0.8 1.2 0.4 1.6 2.0 v cesat (v) 0 t j = ? 35 c t j = 125 c t j = 25 c 003aad549 0.8 0.4 1.2 1.6 v besat (v) 0 i c (a) 10 ? 2 10 1 10 ? 1 1.0 0.6 0.2 1.4 t j = 125 c t j = ? 35 c t j = 25 c 003aad546 10 ? 3 10 1 10 ? 2 10 ? 1 10 10 2 1 i c (a) h fe v ce = 3 v (1) (2) (3) t j = 25 c t j = 125 c t j = ? 35 c 003aad547 10 ? 3 10 1 10 ? 2 10 ? 1 10 10 2 1 i c (a) h fe v ce = 5 v (1) (2) (3) t j = 25 c t j = 125 c t j = ? 35 c
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 7 of 12 nxp semiconductors BUJ100LR npn power transistor fig 10. test circuit for inductive load switching f ig 11. switching times wave forms for inductive load 001aab99 1 v cc l c dut l b i bon v bb 001aab99 2 i c i b 90 % t off i bon t s t f t t ? i boff i con 10 %
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 8 of 12 nxp semiconductors BUJ100LR npn power transistor 7. package outline fig 12. package outline sot54 (to-92) unit a references outline version european projection issue date iec jedec jeita mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) max. 2.5 b 1 0.66 0.55 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43a 04-06-28 04-11-16 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot5 4 e 1 e 1 2 3
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 9 of 12 nxp semiconductors BUJ100LR npn power transistor 8. revision history table 7. revision history document id release date data sheet status change notice supersedes BUJ100LR v.2 20100729 product data sheet - BUJ100LR v.1 modifications: ? various changes to content. BUJ100LR v.1 20090812 product data sheet - -
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 10 of 12 nxp semiconductors BUJ100LR npn power transistor 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data fr om the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
BUJ100LR all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 02 ? 29 july 2010 11 of 12 nxp semiconductors BUJ100LR npn power transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BUJ100LR npn power transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 29 july 2010 document identifier: BUJ100LR please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 legal information. . . . . . . . . . . . . . . . . . . . . . . .10 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 contact information. . . . . . . . . . . . . . . . . . . . . . 11

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